Region

Empfängermodule in TO-Gehäuse

The compact TO-packaged units offer the user the convenience and performance advantages of having the photodetector and amplifier in as close proximity as possible, minimizing EMI and microphonics. Hybrid photodiode/ amplifier modules are available using any of our room temperature or TE-cooled photodiodes.
A 4-pin TO-5 is used for fixed-gain, un-cooled units with active areas up to 3mm diameter. TO-8 packages are used for larger area devices and for applications where user selectability in terms of gain, bandwidth, and offset is desirable. TE-coolers for temperature stabilization and/or performance enhancement can also be added in the TO-8 packages and in the larger T-5 OFHC copper housings. Photoconductor/amplifier modules are available containing PbS, PbSe and HgCdTe devices. These use TO-8 or T-5 packages for either room temperature or TE-cooled operation. The units are AC-coupled and can be provided with user selectable bias, gain, and bandwidth.

Modell                                  

Aktive         
Fläche  

Detektortyp      

S - 010 - E5

1 mm

Silicon 2k, 20k, 1M, 10M

S - 025 - E5

2.5 mm

Silicon 2k, 20k, 1M, 10M

IGA - 010 - E5

1 mm

InGaAs 2k, 10k, 1M, 10M

IGA - 020 - E5

2 mm

InGaAs 1k, 10k, 1M

IGA - 030 - E5

3 mm

InGaAs 0.5k, 5k, 1M

 

 

 

S - 010 - E8

1 mm

Silicon

S - 025 - E8

2.5 mm

Silicon

S - 050 - E8

5 mm

Silicon

S - 058 - E8

5.8 mm

Silicon

 

 

 

IGA - 010 - E8

1 mm

InGaAs

IGA - 020 - E8

2 mm

InGaAs

IGA - 030 - E8

3 mm

InGaAs

IGA - 050 - E8

5 mm

InGaAs

 

 

 

IGA1.9 - 010 - E8

1 mm

Extended InGaAs

IGA1.9 - 030 - E8

3 mm

Extended InGaAs

IGA2.2 - 010 - E8

1 mm

Extended InGaAs

IGA2.2 - 030 - E8

3 mm

Extended InGaAs

 

 

 

PBS - 010 - E8

1 mm

PbS

PBS - 020 - E8

2 mm

PbS

PBS - 030 - E8

3 mm

PbS

PBS - 050 - E8

5 mm

PbS

 

 

 

PBSE - 010 - E8

1 mm

PbSe

PBSE - 020 - E8

2 mm

PbSe

PBSE - 030 - E8

3 mm

PbSe

PBSE - 050 - E8

5 mm

PbSe

 

 

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Tel. +49 7243 604-154
osm@polytec.de